■ 제품필수정보

제조사	Infineon
제조사품명	IRF135S203
간략설명	N-Channel MOSFET, 129 A, 135 V, 3-Pin D2PAK Infineon IRF135S203

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 129 A Maximum Drain Source Voltage = 135 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 8.4 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 441 W Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +175 °C
시리즈 = HEXFET StrongIRFET??Power MOSFET, Infineon. Infineon's StrongIRFET family is optimized for low R ;sub>DS ;/sub>(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.