■ 제품필수정보
| 제조사 |
Onsemi |
| 제조사품명 |
NGTB15N60S1EG |
| 간략설명 |
onsemi NGTB15N60S1EG IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole |
■ 제품사양
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 117 W
패키지 = TO-220
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Transistor Configuration = Single
크기 = 10.28 x 4.82 x 15.75mm
최소 작동 온도 = -55 °C IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
