■ 제품필수정보

제조사	IXYS
제조사품명	IXYH30N170C
간략설명	IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20 V, ±30V Number of Transistors = 1
패키지 = TO247AD
장착형태 = Through Hole
핀수 = 3 Transistor Configuration = Single
크기 = 16.13 x 5.21 x 21.34mm
최대 작동 온도 = +175 °C IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.Thin wafer XPT technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) High efficiency Increased reliability of power systems Applications Pulser circuits Laser and X-ray generators High-voltage power supplies High-voltage test equipment Capacitor discharge circuits AC switches