■ 제품필수정보

제조사	Nexperia
제조사품명	PMV65XPEAR
간략설명	P-Channel MOSFET, 3.3 A, -20 V, 3-Pin SOT-23 Nexperia PMV65XPEAR

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 3.3 A Maximum Drain Source Voltage = -20 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 125 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = -1.25V Minimum Gate Threshold Voltage = -0.75V Maximum Power Dissipation = 6250 mW Transistor Configuration = Single Maximum Gate Source Voltage = 12 V
최대 작동 온도 = +150 °C Automotive Standard = AEC-Q101 Automotive MOSFETs, The worlds largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175°C rating20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 890 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified