■ 제품필수정보

제조사	Nexperia
제조사품명	PMXB56ENZ
간략설명	N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 Nexperia PMXB56ENZ

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3.2 A Maximum Drain Source Voltage = 30 V
패키지 = DFN1010D-3
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 87 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 8.33 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V
최대 작동 온도 = +150 °C
높이 = 0.36mm N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 49 m??Very fast switching Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters