■ 제품필수정보

제조사	Onsemi
제조사품명	NTJD1155LT1G
간략설명	Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 1.3 A Maximum Drain Source Voltage = 8 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 320 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Maximum Power Dissipation = 400 mW Transistor Configuration = N+P Loadswitch Maximum Gate Source Voltage = +8 V Width = 1.35mm
높이 = 1mm Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ??s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ??s trench technology.