■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SI4178DY-T1-GE3 |
| 간략설명 |
N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 33 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.4V Maximum Power Dissipation = 5 W Transistor Configuration = Single Maximum Gate Source Voltage = -25 V, +25 V Typical Gate Charge @ Vgs = 7.5 nC @ 10 V
높이 = 1.55mm N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
