■ 제품필수정보

제조사	Toshiba
제조사품명	SSM6N35FE
간략설명	Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 Toshiba SSM6N35FE

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 180 mA Maximum Drain Source Voltage = 20 V
패키지 = SOT-563
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 20 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 150 mW Maximum Gate Source Voltage = ±10 V Width = 1.6mm
높이 = 0.55mm 1.2-V drive N-ch 2-in-1 Low ON-resistance: Ron = 20 ??(max) (@VGS = 1.2 V) Ron = 8 ??(max) (@VGS = 1.5 V) Ron = 4 ??(max) (@VGS = 2.5 V) Ron = 3 ??(max) (@VGS = 4.0 V)