■ 제품필수정보

제조사	ROHM
제조사품명	R6003KND3TL1
간략설명	N-Channel MOSFET, 3 A, 600 V, 3-Pin DPAK ROHM R6003KND3TL1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.5 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5.5V Minimum Gate Threshold Voltage = 3.5V Maximum Power Dissipation = 44 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 6.4mm
높이 = 2.4mm R6003KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.Low on-resistance Ultra fast switching speed Parallel use is easy Pb-free plating