■ 제품필수정보

제조사	Onsemi
제조사품명	NVMFS5C638NLT1G
간략설명	N-Channel MOSFET, 133 A, 60 V, 5-Pin DFN onsemi NVMFS5C638NLT1G

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 133 A Maximum Drain Source Voltage = 60 V
패키지 = DFN
장착형태 = Surface Mount
핀수 = 5 Maximum Drain Source Resistance = 3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 100 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 6.1mm
높이 = 1.05mm Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.Features Industry Standard Small Footprint 5 x 6 mm Package Low RDS(on) Low QG and Capacitance NVMFS5C638NLWF - Wettable Flank Option PPAP capable Benefits Compact Design and Standard footprint for direct drop-in Minimize Conduction Losses Minimize Driver Losses Enhanced Optical Inspection Applications Reverser Battery protection Switching power supplies Power switches (High Side Driver, Low Side Driver, H-Bridges etc.) End Products Solenoid Driver ??ABS, Fuel injection Motor Control ??EPS, Wipers, Fans, Seats, etc. Load Switch ??ECU, Chassis, Body