■ 제품필수정보
| 제조사 |
Onsemi |
| 제조사품명 |
FGH75T65SHDTL4 |
| 간략설명 |
onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole |
■ 제품사양
Maximum Continuous Collector Current = 150 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 455 W
패키지 = TO-247
장착형태 = Through Hole Channel
타입 = P
핀수 = 4 Switching Speed = 1MHz Transistor Configuration = Single
크기 = 15.8 x 5.2 x 22.74mm
최소 작동 온도 = -55 °C Using novel field stop IGBT technology, Fairchild??s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.Maximum Junction Temperature: TJ =175°C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution