■ 제품필수정보

제조사	Onsemi
제조사품명	FGD3245G2-F085
간략설명	onsemi FGD3245G2-F085 Digital Transistor, 450 (Breakdown) V, 2 + Tab-Pin DPAK

■ 제품사양

Maximum Collector Emitter Voltage = 450 (Breakdown) V
패키지 = DPAK
장착형태 = Surface Mount Maximum Power Dissipation = 150 W Transistor Configuration = Single
핀수 = 2 + Tab
칩당 요소 수 = 1 Base-Emitter Resistor = 30kΩ The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed in Fairchilds EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBTs collecter- to-emitter voltage at 450 V, which enables systems requiring a higher spark voltage.SCIS Energy = 320 mJ at TJ = 25°C Logic Level Gate Drive Low Saturation Voltage