■ 제품필수정보

제조사	Onsemi
제조사품명	MBR1100G
간략설명	onsemi 100V 2A, Schottky Diode, 2-Pin DO-41 MBR1100GOS

■ 제품사양

장착형태 = Through Hole
패키지 = DO-41 Maximum Continuous Forward Current = 2A Peak Reverse Repetitive Voltage = 100V
다이오드 구성 = Single Rectifier
타입 = Schottky Rectifier Diode
타입 = Schottky
핀수 = 2
칩당 요소 수 = 1 Diode Technology = Schottky Barrier Diameter = 2.7mm Peak Non-Repetitive Forward Surge Current = 50A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature High Surge Capacity Mechanical Characteristics: Case: Epoxy, Moulded
무게: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily solder able Lead Temperature for Soldering Purposes: 260°C Max. For 10 Seconds Shipped in plastic bags, 1000 per bag Polarity: Cathode Indicated by Polarity Band Marking: B1100 These are Pb-Free Devices