■ 제품필수정보

제조사	Onsemi
제조사품명	FDG6321C
간략설명	onsemi FDG6321C Dual Digital Transistor, 6-Pin SC-70

■ 제품사양

패키지 = SC-70
장착형태 = Surface Mount Maximum Power Dissipation = 300 mW
핀수 = 6
칩당 요소 수 = 2
최대 작동 온도 = +150 °C These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.N-Ch 0.50 A, 25 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V RDS(ON) = 0.60 Ω @ VGS= 2.7 V P-Ch -0.41 A, -25 V RDS(ON) = 1.1 Ω @ VGS= -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Applications This product is general usage and suitable for many different applications.