■ 제품필수정보
| 제조사 |
Infineon |
| 제조사품명 |
AUIRFS8407TRL |
| 간략설명 |
N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK Infineon AUIRFS8407TRL |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 250 A Maximum Drain Source Voltage = 40 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.0018 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.Advanced Process Technology New Ultra Low On-Resistance Automotive Qualified