■ 제품필수정보

제조사	Infineon
제조사품명	IPAW60R360P7SXKSA1
간략설명	N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP Infineon IPAW60R360P7SXKSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9 A Maximum Drain Source Voltage = 650 V
패키지 = TO-220 FP
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.36 Ω Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = 600V CoolMOS??P7 The Infineon 600V CoolMOS??P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler. The CoolMOS??7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products