■ 제품필수정보

제조사	Infineon
제조사품명	IPB065N10N3GATMA1
간략설명	N-Channel MOSFET Transistor & Diode, 80 A, 100 V, 3-Pin D2PAK Infineon IPB065N10N3GATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 80 A Maximum Drain Source Voltage = 100 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.0065 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = OptiMOS 3 The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.Excellent switching performance World??s lowest R DS(on) Very low Q g and Q gd Excellent gate charge x R DS(on) product (FOM) Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products