■ 제품필수정보

제조사	Infineon
제조사품명	IPN60R600P7SATMA1
간략설명	N-Channel MOSFET Transistor & Diode, 16 A, 650 V, 3-Pin SOT-223 Infineon IPN60R600P7SATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 16 A Maximum Drain Source Voltage = 650 V
패키지 = SOT-223
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.6 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = CoolMOS P7 The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).Ease of use and fast design-in through low ringing tendency and usage ??across PFC and PWM stages Simplified thermal management due to low switching and conduction ??losses Increased power density solutions enabled by using product swith ??smaller foot print and higher manufacturing quality due to>2kVESD ??protection Suitable for awide variety of applications and power ranges