■ 제품필수정보

제조사	Infineon
제조사품명	IPS60R1K0CEAKMA1
간략설명	Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK Infineon IPS60R1K0CEAKMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 6.8 A Maximum Drain Source Voltage = 650 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 1 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 2
시리즈 = CoolMOS The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.Narrow margins between typical and max R DS(on) Reduced energy stored in output capacitance (E oss) Good body diode ruggedness and reduced reverse recovery charge (Q rr) Optimized integrated R g Low conduction losses Low switching losses Suitable for hard and soft switching Easy controllable switching behaviour Improved efficiency and consequent reduction of power consumption Less design in effort Easy to use