■ 제품필수정보

제조사	Infineon
제조사품명	IPP60R022S7XKSA1
간략설명	N-Channel MOSFET, 23 A, 600 V, 3-Pin TO-220 Infineon IPP60R022S7XKSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 23 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 22 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 1
시리즈 = IPP60R The Infineon design optimized for low conduction losses, the 600V CoolMOS??S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS??S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.Minimize conduction losses Increase energy efficiency More compact and easier designs Eliminate or reduce heat sink in solid state design Lower total cost of ownership (TCO) or bill-of-material (BOM) cost