■ 제품필수정보

제조사	Onsemi
제조사품명	NGTB30N135IHR1WG
간략설명	onsemi NGTB30N135IHR1WG IGBT, 60 A 1350 V, 3-Pin TO-247, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 1350 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 394 W
패키지 = TO-247
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Transistor Configuration = Single
크기 = 16.25 x 5.3 x 21.4mm Gate Capacitance = 5530pF IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.